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高压SJ MOSFETs
采用超结技术的高压MOSFET,实现高效率和低损耗
主要应用领域
产品列表
| Product | Product Status | Qualification | Package Type | Technology | VDS Max | RDS(on) Max | VGS(th) Max | ID @25℃ Max | IDpulse Max | QG(Tot) | Mounting | Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TMO65N180E1 | Active | Industrial | Die | E1 | 650V | 180mΩ | 4.5V | 19A | 57 A | 30.2 nC | - | Efficient Drive |
| TMO65N280E1 | Active | Industrial | Die | E1 | 650V | 280mΩ | 4.5V | 12.5A | 37.5 A | 19.6 nC | - | Efficient Drive |
| TMO65N380E1 | Active | Industrial | Die | E1 | 650V | 380mΩ | 4.5V | 9.6A | 28.8 A | 15.5 nC | - | Efficient Drive |
| TMO65N600E1 | Active | Industrial | Die | E1 | 650V | 600mΩ | 4.5V | 6.3A | 18.9 A | 10.1 nC | - | Efficient Drive |
| TMO65N12KE1 | Active | Industrial | Die | E1 | 650V | 1200mΩ | 4.5V | - | - | - | - | Efficient Drive |
| TMD65N280E1 | Active | Industrial | DPAK | E1 | 650V | 280mΩ | 4.5V | 12.5A | 37.5 A | 19.6 nC | Surface Mount | Efficient Drive |
| TMD65N380E1 | Active | Industrial | DPAK | E1 | 650V | 380mΩ | 4.5V | 9.6A | 28.8 A | 15.5 nC | Surface Mount | Efficient Drive |
| TMD65N600E1 | Active | Industrial | DPAK | E1 | 650V | 600mΩ | 4.5V | 6.3A | 18.9 A | 10.1 nC | Surface Mount | Efficient Drive |
| TMD65N180E1 | Active | Industrial | DPAK | E1 | 650V | 180mΩ | 4.5V | 19A | 53 A | 32.1 nC | Surface Mount | Efficient Drive |
| TMD65N12kE1 | Active | Industrial | DPAK | E1 | 650V | 1200mΩ | 4.5V | - | - | - | Surface Mount | Efficient Drive |
| TMF65N180E1 | Active | Industrial | TO220F | E1 | 650V | 180mΩ | 4.5V | 19A | 53 A | 32.1 nC | Through Hole | Efficient Drive |
| TMF65N280E1 | Active | Industrial | TO220F | E1 | 650V | 280mΩ | 4.5V | 12.5A | 37.5 A | 19.6 nC | Through Hole | Efficient Drive |
| TMF65N380E1 | Active | Industrial | TO220F | E1 | 650V | 380mΩ | 4.5V | 9.6A | 28.8 A | 15.5 nC | Through Hole | Efficient Drive |
| TMF65N600E1 | Active | Industrial | TO220F | E1 | 650V | 600mΩ | 4.5V | 6.3A | 18.9 A | 10.1 nC | Through Hole | Efficient Drive |